Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of a gas phase chemical process. The majority of ALD reactions use two chemicals, typically called precursors. These precursors react with a surface one at a time in a sequential, self-limiting, manner. By exposing the precursors to the growth surface repeatedly, a thin film is deposited.
Read more about Atomic Layer Deposition: Introduction, ALD Process, ALD in Microelectronics
Famous quotes containing the words atomic and/or layer:
“Other centuries had their driving forces. What will ours have been when men look far back to it one day? Maybe it won’t be the American Century, after all. Or the Russian Century or the Atomic Century. Wouldn’t it be wonderful, Phil, if it turned out to be everybody’s century, when people all over the world—free people—found a way to live together? I’d like to be around to see some of that, even the beginning.”
—Moss Hart (1904–1961)
“This world is run by people who know how to do things. They know how things work. They are equipped. Up there, there’s a layer of people who run everything. But we—we’re just peasants. We don’t understand what’s going on, and we can’t do anything.”
—Doris Lessing (b. 1919)