Optoelectronic
BAM has a bandgap of about ~1.5 eV. Significant absorption is observed at sub-bandgap energies and attributed to metal atoms. Electrical resistivity depends on the sample purity and is about 104 Ohm·cm. The Seebeck coefficient is relatively high, between −5.4 and −8.0 mV/K. This property originates from electron transfer from metal atoms to the boron icosahedra and is favorable for thermoelectric applications.
Read more about this topic: Aluminium Magnesium Boride